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A novel ESD protection design for radio-frequency (RF)
' p0 v- @% C% B& M' K0 w2 `differential input/output (I/O) pads is proposed and successfully
4 H6 Y" d; d5 m2 Lapplied to a 5-GHz differential low-noise amplifier (LNA) in a
$ K# ], x& j" C* S130-nm CMOS process. In the proposed ESD protection design,
" U, m8 T) W8 @an ESD bus and a local ESD clamp device are added between the$ K1 I; L4 H. i& A( u
differential input pads to quickly bypass ESD current, especially
0 t/ I/ F+ o! F4 d- }! `under the pin-to-pin ESD-stress condition. With 10.3-mW power
/ E- O2 ]$ J) t, W0 N3 [. N. gconsumption under 1.2-V power supply, the differential LNA
6 {7 r- A [& k" ^6 uwith the proposed ESD protection design has the human-bodymodel
0 ^; \* E% z/ U(HBM) ESD robustness of 3 kV, and exhibits 18-dB power
/ r- o9 ~; U6 Y( d! N/ e( `gain and 2.62-dB noise figure at 5 GHz. Experimental results
( Q( f0 w) ^* K" @- L/ V! Ghave demonstrated that the proposed ESD protection circuit can R6 H6 R9 V' @. i% c
be co-designed with the input matching network of LNA to
. }4 P! r+ N4 Q" Esimultaneously achieve excellent RF performance and high ESD robustness.7 g( P8 E+ E7 I+ c' Q$ q
8 t; H! `7 |9 u |
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