標題: 借鉴一下RF ESD Design in 130nm CMOS [打印本頁] 作者: semico_ljj 時間: 2008-11-1 11:05 PM 標題: 借鉴一下RF ESD Design in 130nm CMOS An ESD-Protected 5-GHz Differential Low-Noise Amplifier in a 130-nm CMOS Process * @. c) A! v' q' G2 W, f4 E$ r. P! F0 ^
Abstract- A novel ESD protection design for radio-frequency (RF) differential input/output (I/O) pads is proposed and successfully: ~) @3 {6 r7 P& L0 J% a6 F$ i; I5 h
applied to a 5-GHz differential low-noise amplifier (LNA) in a 130-nm CMOS process. In the proposed ESD protection design,0 C3 y1 C' X5 P2 ?6 Y) h
an ESD bus and a local ESD clamp device are added between the differential input pads to quickly bypass ESD current, especially 1 p- a7 I. M4 e/ T l. cunder the pin-to-pin ESD-stress condition. With 10.3-mW power consumption under 1.2-V power supply, the differential LNA ( P% b9 @ m( n" ^ k! s* _' Zwith the proposed ESD protection design has the human-bodymodel (HBM) ESD robustness of 3 kV, and exhibits 18-dB power gain and 2.62-dB noise figure at 5 GHz. Experimental results have demonstrated that the proposed ESD protection circuit can be co-designed with the input matching network of LNA to simultaneously achieve excellent RF performance and high ESD robustness. b& \; x; [4 f# Z: D
+ v/ J$ F9 |* t8 o/ c7 ^ 作者: Chandler_Tseng 時間: 2009-10-16 10:18 AM
This is what I need document.... 2 B# X; V S% j7 \1 J& |. W9 J( W1 ^. G4 {9 N
( ?2 ]. H4 D0 e2 k5 DThanks.作者: ksj116 時間: 2010-2-5 02:10 PM
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