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標題: Low-Power Low-Voltage Sigma-Delta Modulators in Nanometer CMOS [打印本頁]

作者: cnasic    時間: 2008-3-11 11:52 AM
標題: Low-Power Low-Voltage Sigma-Delta Modulators in Nanometer CMOS
Contents  K, ~  ~2 F7 Z9 p# w, z
List of Tables0 S6 N! ]( r7 x% F) K
List of Figures
4 j+ z: P2 y- K% N8 _/ O/ H; iSymbols and Abbreviations
2 l" I7 r6 ]$ C" E1 x( v6 zPhysical
$ J- X7 g7 f* m3 d7 _  M- G) C1 Introduction 1
/ {# |( L7 r8 `. D& L9 }1.1 Motivation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1; v; |7 Q* k5 A8 ^* j+ d% s9 j$ s
1.2 Outline of the Work . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
& k5 j/ G! o( [* }4 |/ G2 ADCs in Nanometer CMOS Technologies 3( C- g0 v; o/ g$ b1 _/ v
2.1 Introduction . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35 C  n- O! a6 Y) B6 K% q1 m
2.2 Scaling-Down of CMOS Technologies . . . . . . . . . . . . . . . . . 37 q) V) Z9 X$ q- E4 c
2.2.1 Driving Force of the CMOS Scaling-Down . . . . . . . . . . 4. J5 w) B( m2 [1 L/ a  m0 P6 M9 G0 N
2.2.2 Moving into Nanometer CMOS Technologies . . . . . . . . . 54 M- w" [/ l& e4 t  @
2.3 Impact of Moving into Nanometer CMOS to Analog Circuits . . . . . 6
, B6 {* S6 G' K( o) h2.3.1 Decreased Supply Voltage . . . . . . . . . . . . . . . . . . . 6
7 b) {. V0 D# t' h7 e: {2.3.2 Impact on Transistor Intrinsic Gain . . . . . . . . . . . . . . 7! w( g1 l8 i2 w$ a; j$ @! t
2.3.3 Impact on Device Matching . . . . . . . . . . . . . . . . . . 9
5 `5 Q2 \: T/ j) C) J2.3.4 Impact on Device Noise . . . . . . . . . . . . . . . . . . . . 10
  Q8 j$ ~/ g# }2 q2.4 ADCs in Nanometer CMOS . . . . . . . . . . . . . . . . . . . . . . 11
( Q8 {' r; R  w/ S% F* X1 U2.4.1 Decreased Signal Swing . . . . . . . . . . . . . . . . . . . . 13
0 c" ^7 Q! v1 g2 d% H2.4.2 Degraded Transistor Characteristics . . . . . . . . . . . . . . 13
& R! J0 x: h# v6 ]3 _2.4.3 Distortion . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14  ^) I0 V6 y  I; v- c& Z: m
vii
1 t+ Y$ g# }3 H0 ~8 {& A2.4.4 Switch Driving . . . . . . . . . . . . . . . . . . . . . . . . . 14/ c% |% {; S  r+ q
2.4.5 Improved Device Matching . . . . . . . . . . . . . . . . . . . 17" Q2 k  X! r& }6 d7 I
xi
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xxi; N  ^  g+ _. F
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . xxi
9 E4 C. y1 M. ~( b; n! a' Q: s7 `Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . xxi* u- b( K/ N) C: u4 }
CONTENTS: N- Q2 e& q: i: B% |& O& d
2.4.6 Digital Circuits Advantages . . . . . . . . . . . . . . . . . . 17% x* R0 Q+ g+ F  l8 T) s0 J; X- `
2.5 Conclusion . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
5 J! U1 e7 [$ j; W' v3 Principle of - ADC 199 a! L- k8 o% P8 Q+ a4 w9 E$ [
3.1 Introduction . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19+ y" s# O; U, ?; X5 S$ Q8 m
3.2 Basic Analog to Digital Conversion . . . . . . . . . . . . . . . . . . 19
6 a* D5 q8 F; y' D7 g. Z3.3 Oversampling and Noise Shaping . . . . . . . . . . . . . . . . . . . 240 s/ _0 w$ T4 a' N9 `  z
3.3.1 Oversampling . . . . . . . . . . . . . . . . . . . . . . . . . . 25$ o8 L  r# S) E( d* Q
3.3.2 Noise Shaping . . . . . . . . . . . . . . . . . . . . . . . . . 26
1 D% R5 E/ M  T+ c6 U6 O3.3.3 - Modulator . . . . . . . . . . . . . . . . . . . . . . . . 29
+ U1 D7 A5 L. ^$ y( }* v; G3.3.4 Performance Metrics for the - ADC . . . . . . . . . . . . 31
, |2 j1 u2 O, t; x' h8 g3.4 Traditional - ADC Topology . . . . . . . . . . . . . . . . . . . . 33
% C5 b  q: d3 v& T0 Z, `3.4.1 Single-Loop Single-Bit - Modulators . . . . . . . . . . . 33
- X8 k  ^  n# l- g+ P7 x4 R3.4.2 Single-Loop Multibit - Modulators . . . . . . . . . . . . 37: I: O7 g% Y8 z
3.4.3 Cascaded - Modulators . . . . . . . . . . . . . . . . . . 39
7 Q9 h. S# k( x" n/ h: k3.4.4 Performance Comparison of Traditional - Topologies . . 46
$ L, k% y, L! I3.5 Conclusion . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 46( E/ Z" k& s9 a& _
4 Low-Power Low-Voltage - ADC Design in Nanometer CMOS: Circuit5 a0 O6 [- _% d# U( O+ I
Level Approach 471 i- _; D' _$ C; W
4.1 Introduction . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 47
( u! h- h* v5 C0 _" e, F  i! d4.2 Low-Voltage Low-Power OTA Design . . . . . . . . . . . . . . . . . 48
8 e* `$ H- S* W2 ?7 h0 Z9 _4.2.1 Gain Enhanced Current Mirror OTA Design . . . . . . . . . . 497 ^, w1 v% p( T: w/ f
4.2.2 A Test Gain-Enhanced Current Mirror OTA . . . . . . . . . . 53
2 G/ `: o0 Q+ O4.2.3 Implementation and Measurement Results . . . . . . . . . . . 54- W8 T5 e1 l$ f" s7 H/ M) B2 H& N3 `6 W% X
4.2.4 Two-Stage OTA Design . . . . . . . . . . . . . . . . . . . . 55
! i: S& L$ X2 P; k$ w+ R# o4.3 Low-Voltage Low-Power - ADC Design . . . . . . . . . . . . . . 666 Q2 A4 O1 ^; o% D& D% q0 s- L
4.3.1 Impact of Circuit Nonidealities to - ADC Performance . . 66
; N. l/ Z; X2 @4.3.2 Modulator Topology Selection . . . . . . . . . . . . . . . . . 67
+ B& R, B% b# `" j, U9 E6 u4.3.3 OTA Topology Selection . . . . . . . . . . . . . . . . . . . . 69
0 N) E4 G& o: _1 ]8 f4.3.4 Transistor Biasing . . . . . . . . . . . . . . . . . . . . . . . 75! ^* ~$ J, _) t4 ?5 D# g( h
4.3.5 Scaling of Integrators . . . . . . . . . . . . . . . . . . . . . . 75
' M) h  I& k: j' i$ }; x! o9 E, u2 v4.4 A 1-V 140-μW- Modulator in 90-nm CMOS . . . . . . . . . . . 76
4 S& Q/ p5 s% P1 E7 C' _: u4.4.1 Building Block Circuits Design . . . . . . . . . . . . . . . . 76
- q  ^2 G( P3 D- q4 d7 gviii
1 s( c0 m+ v; M1 g" b4.4.2 Implementation . . . . . . . . . . . . . . . . . . . . . . . . . 80
5 @! h# N9 ?' |+ g/ _4 q9 d4.4.3 Measurement Results . . . . . . . . . . . . . . . . . . . . . . 828 `- I1 C$ {2 i. [' g& @
4.5 Measurements on PSRR and Low-Frequency Noise Floor . . . . . . . 87
1 {) S1 }$ W4 ?/ n& ?3 y3 P4.5.1 Introduction of PSRR . . . . . . . . . . . . . . . . . . . . . . 87
4 W% ?4 a: m4 @% H4.5.2 PSRR Measurement Setup . . . . . . . . . . . . . . . . . . . 88
, ^& v$ l) }3 o0 x0 c3 ]. k, C( a4.5.3 PSRR Measurement Results . . . . . . . . . . . . . . . . . . 886 y5 X. y0 P0 e) b( ]0 z; f: A
4.5.4 Measurement on Low-Frequency Noise Floor . . . . . . . . . 95/ a: H( a0 u, T( y/ G) s
4.6 Conclusion . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 96
. v1 A9 R1 F& ?6 H5 Low-Power Low-Voltage - ADC Design in Nanometer CMOS: System$ c* ?3 l; W. \" t5 y4 W  V
CONTENTS ix& i8 d0 H7 g0 J
CONTENTS
. K3 O! ~# g- n8 z: i1 j8 f$ }% F% Y6 Conclusions 1491 w* y0 V! y& V0 [0 D0 c
Bibliography 151
8 R8 x7 p: q0 v. M; _9 W7 q6 A8 zIndex 157
作者: scan7510    時間: 2009-7-27 12:59 AM
看不太懂
" O) W5 H. }6 b可能還沒學過吧
$ g  N4 x( T6 y. U現在只能單純推一下
+ H( j$ _( }: H" E6 H4 v( g, V謝大大分享
作者: deltachen    時間: 2009-11-25 11:44 AM
謝謝大大的分享~知識因分享而壯大!
作者: jjam    時間: 2009-11-25 11:28 PM
感覺是非常實用的內容
! C/ P# [3 A) Q  c感謝大大的分享~~
; G* b5 y8 {0 y希望能對SDM有所認識與了解




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