標題: Layout Optimization on ESD Diodes for Giga-Hz RF and High-Speed I/O Circuits [打印本頁] 作者: semico_ljj 時間: 2010-6-25 08:49 AM 標題: Layout Optimization on ESD Diodes for Giga-Hz RF and High-Speed I/O Circuits Layout Optimization on ESD Diodes for Giga-Hz RF and High-Speed I/O Circuits1 f) o+ r: g5 f9 }, _; a2 C
: \! W9 d0 f; F: X' o0 [. J# K0 g作者: semico_ljj 時間: 2010-6-25 08:50 AM
Abstract -- The diode operated in forward-biased condition has , y& ^3 @4 q: ?& r7 M' Sbeen widely used as an effective on-chip ESD protection device at+ _' E2 _2 T, E' G! \, V9 \) a5 s
GHz RF and high-speed I/O pads due to the small parasitic' r+ d. g, C* ^' [. A
loading effect and high ESD robustness in CMOS integrated# R* P$ l7 Z1 d- |
circuits (ICs). This work presents new ESD protection diodes3 X) y" L5 q" |# i' r
realized in the octagon, waffle-hollow, and octagon-hollow layout ) k# ~6 d7 ?) K! M% C* Ystyles to improve the efficiency of ESD current distribution and6 W, x; L- x, e+ n3 m- k
to reduce the parasitic capacitance. The new ESD protection * a; h" N9 B7 n4 V9 \! C- `3 wdiodes can achieve smaller parasitic capacitance under the same9 Q$ F/ i( }5 q/ D' F
ESD robustness level as compared to the waffle diode. Therefore, ( @% M& L1 O! ~: H0 ythe signal degradation of GHz RF and high-speed transmission ' d) J8 c3 e3 ?" b, Z0 l% {can be reduced due to smaller parasitic capacitance from the new 8 C: G6 @+ ?; }/ Qproposed diodes.作者: xp212125o 時間: 2010-7-28 01:45 PM
看起來有幫助- j9 g- T% m/ [/ T
感謝分享 0 q9 s1 N$ w! U% P* h先下載來看看: t g; Y- K& X9 a* U
thank you ~作者: linyuejing 時間: 2010-8-21 09:55 AM
下載來看看 ; w1 n* G- z5 J下載來看看 2 q0 D4 C n: @$ a下載來看看 , d: \+ ?: H" d8 f下載來看看* p, c F' v1 T B4 b% {7 [
應該有幫助 2 {; ?* k, f4 n4 ?8 N: g謝謝囉作者: caesarxl 時間: 2010-8-24 02:58 PM
谢谢楼主分享,非常感谢作者: oika_51 時間: 2010-9-10 03:49 PM
看起來有幫助1 o* w+ S* b* W1 A0 [. I, A
感謝分享作者: linger809 時間: 2010-9-11 05:00 PM
Abstract -- The diode operated in forward-biased condition has / L- d+ w( U# p, a0 ubeen widely used as an effective on-c ... * X0 U2 V: D) y, G d6 W0 wsemico_ljj 發表於 2010-6-25 08:50 AM
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$ Y- f* G/ C& Q% V8 ?不知道这种形式的IO有没有经过测试,实际的效果和预想的有多少的差别,thanks!作者: oscargo 時間: 2011-6-7 05:02 PM
正為ESD耐受度傷腦筋----作者: zhifj86 時間: 2012-3-8 02:19 PM
thank you very much for your sharing作者: sslin 時間: 2021-8-13 05:43 PM
謝謝大大的分享~~知識因分享而壯大! \6 ]1 c- J/ R/ B/ a6 y. k' ^* E9 E( P+ Y$ `' ?- h5 t# W- Z
~只有站在巨人的肩膀上才不會被食人族吃了!