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ESD Implantations for On-Chip ESD Protection With Layout Consideration in 0.18-m Salicided, ?. q* c" L/ ?1 w0 X6 `' S
CMOS Technology& C! G# x" u7 H& q1 U
) i+ w. J! J6 H6 @+ U, sIEEE TRANSACTIONS ON SEMICONDUCTOR MANUFACTURING, VOL. 18, NO. 2, MAY 2005/ k: i. Z4 F' }+ ~7 Z I- i
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Abstract—One method to enhance electrostatic discharge (ESD)robustness of the on-chip ESD protection devices is through process design by adding an extra “ESD implantation” mask. In this work, ESD robustness of nMOS devices and diodes with different ESD implantation solutions in a 0.18- m salicided CMOS process is investigated by experimental testchips.- M$ e/ H1 ? d2 Y- n0 X/ C
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