layout 的NMOS bulk端如何在LVS分開?

tseng74330

各位先進大家好，就大家所知，因為NMOS全部長在PSUB上，
因此LVS會全部認成同一點，
但是當我要分成多組GND時，或者要把guard ring外接別組電源時，LVS就會出現錯誤，
! O$ A6 ^) }" Z- x5 S' S7 F5 \; G, [Extraction Report 出現:
Stamping conflict in SCONNECT-Multiple source nets stamp one target net. Use LVS REPORT OPTION S or LVS SOFTCHK statement to obtain detailed information.
把NMOS bulk端連上後就又沒問題了。
在不使用Deep NWELL的前提下，該如何解決?
謝謝大家
PS:我使用TSMC13RF製程

12345

看LVS COMMAND FILE 怎割sub,一般是蓋psub2,或圍一圈N-ring(主要是去看LVS COMMAND FILE怎寫就,知道,那個很簡單),這樣只是會讓LVS過,但P-SUB還是只有一塊,除非nmos做在deep-newell或NBL(可去看剖面圖),實際IC的地,只一塊,還有須注意 lvs對, 不一定ok,譬如我蓋psub2然和只在裡面打個pring接到VDD,這樣LVS還是會對,其實IC的POWER和GROUND已經SHORT,若ERC有寫,可從ERC看出來,若是ERC沒寫,LVS是看不出來有錯的,LAYOUT不是光只會畫,其他還是很重要.

111qqq

I agree with 12345,
but I don't think that everyone can understand the rule file format.
, U4 p3 l- D6 T7 v3 \% I; O: y0 ~, jIn my point of view,the layouter should know  what process(NWELL,Twin WELL,Triple WELL ...),Cross section ,what purpose of each layer and so on.(of course in the end,you have to understand the rule format)

The lvs report suggested "Use LVS REPORT OPTION S" then you will get one more report.
It will be show what problem is.

Good luck.