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To extract SPICE model parameters for MOS, there are some measurements needed:- n% l* t$ f9 B7 a' V2 z( `5 _
DC: at different temperature (basically low temp., room temp. & high temp.)
. y$ d3 c3 l7 V Id-Vd under different Vg+ Y4 i6 q+ ]/ k$ V6 e% i
Id-Vg under different Vd (linear & saturation) & Vb# S. N" _& j. O+ s2 a: V% {
Id-Vg under GIDL region (BSIM4) g, P( u. j- v% T+ Y
Ig-Vg (BSIM4)
, F4 E; l1 H7 f: i- MAC:
4 t8 l. H+ _' u3 B9 N& ~ Junction capacitance
, {, g. w/ p$ ` Intrinsic capacitance: Cgc, Cgd, Cgs & Cgb
. q" g3 J- t/ c: ~; ]8 ~ Ring oscillator speed$ @ O# }3 `8 K& d
You can find all information you need in the BSIMpro+ user manual. The most important, it takes much time for extracting accurate model parameters, especially for one who is not that familiar with model extraction. The better way is to modify one existing model card with which the device performance is quite similar to the one you are going to extract.5 v8 g; t6 N+ p) Y
Good luck & God bless you. |
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