11/19-20 Semiconductor Manufacturing Forum 2009

chip123 · 發表於 2009-10-21 17:58:10

由台灣半導體產業協會主辦之「2009半導體製造技術論壇Semiconductor Manufacturing Forum 2009」將於11/19-20於新竹交通大學舉行，會中邀請關於Thin Film、Asembly, Packaging & Testing、Diffusion、Design, Reliability & Testing、Litho與Etching等專家對未來趨勢與新技術進行專題演講，是半導體專業人士不可錯過的一場盛會，即日起開始報名，歡迎各界踴躍參加。

2009/11/19-20 National Chiao Tung University Library International Conference Hall
交通大學浩然國際會議廳

Agenda 議程
Session 1: Thin Film (11/19 13:20-16:20)

# f0 q6 u5 U* t" r	Topic	Speaker
13:20-14:00! ^; x% f! @3 T	Engineering Slurry for Copper Chemical Mechanical Polishing 9 S! o% M4 \|0 v: P0 z1 e/ ~) q	Dr. Song-Yuan Chang / , w/ [, F( d2 ^) T) \| CTO& senior VP, UWiZ 5 f4 z9 i7 B$ J: c: q# ~+ rTechnology
14:00-14:40 + s) L O8 d& k0 u	Tailoring CMP Consumable Sets To Meet the Increasing Demands Of IC Device Manufacturing For Advanced Nodes	Dr. Fred Sun / Cabot ; D5 U0 {* v" I- a
14:40-15:004 F7 x+ G5 x) n0 b( S2 N5 h5 f	Break( \|1 E" i1 v, f2 F; ~	7 x+ l9 R+ {4 o5 o! d# b2 o
15:00-15:40 - O+ n& l3 D; i" g9 h1 E- A% U	? & u: A& q" E; q S8 O9 I1 Z* I	Apllied Materials+ D5 F! ]5 G; w0 O& E+ E
15:40-16:20 # q) `* N# m1 U. B0 r% X5 i3 ]	CMP Fundamentals and Implications for Consumables Design # K+ m; c7 C! y	Ms. Kate Kao/ Marketing Manager Dow chemical r# M( a3 @! B* W& A. n$ f+ B

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chip123 · 發表於 2009-10-21 17:59:25

Session 2: Assembly, Packaging & Testing (11/19 13:20-16:20)

. f. K2 l6 b; Y5 h4 k6 c* ?8 v	Topic 3 a" A4 \0 ]/ V; F) o	Speaker * l5 I: @9 {6 i0 D
13:20-14:005 d) z( M P& N5 R4 E; F( L4 O	Sip Assembly technology? 2 `6 M* p# Y: @0 b0 F: h. x	Dr. KC Yee/ VP, ASE % y; r/ Z# @+ P8 ?
14:00-14:405 Y2 }8 j% w& `- m* U	Assembly trend from perspective! I* e2 t2 a1 j6 Y$ Z ?4 e% k9 n	邱世冠資深經理/矽品# E7 c2 \|% z$ M; a3 \2 \( b0 o 前瞻科技中心 , f, m4 T! q4 L0 Y
14:40-15:004 }' c0 X) x$ _9 I/ S& D	Break , p7 b7 t; Q2 L7 U	: Q. f- n1 p% q' \|. N) h4 H& p# L1 G: W
15:00-15:40 - ]2 r6 ^3 o. f% K" \9 V2 y	The Paradise of Cost-Effective Wafer Probing Technology% z. c/ ?( h! T. O" R	Dr. CCNi / Associate Director , KYEC& Q) ?: S, }' }* G0 n+ G
15:40-16:20+ e0 R/ l4 Z' x3 x7 H	RF SOC /Sip? T1 K& n6 r: H3 g$ P3 h	Verigy( v ~) a# t) e

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chip123 · 發表於 2009-10-21 17:59:56

Session 3: Design, Reliability & Testing

; X) N# L! D7 I	Topic T/ a5 B' O- b% O	Speaker. B w3 D! b% m6 E7 `2 b
9:00-9:40 , r, w+ t2 V6 o3 G$ t3 M$ i* V. r	Design Trend?6 _9 ]6 G( c* m3 N- M" ]0 O: O3 @# f	Marketing VP, Dr. Chiang Alchip+ D6 X5 _0 G. [& p* Z; j) ?
9:40-10:20 3 J- {+ U7 r9 T	Charged-Device-Model (CDM) ESD Protection in CMOS Integrated Circuits	Prof. Ming-Dou Ker / I-Shou Universit # F3 d& \6 A r9 i# Y1 Q
10:20-10:40 8 ?; R& }: w, e& e	Break$ b! F& C# U; [) M7 D* z8 z J	\0 d4 L( I( d$ n9 v. I
10:40-11:20+ b% c) m: u: n% V) q4 X	Parametric Test Challenges of the Next Process Frontier 9 j7 U0 d% \) D! P	Ms. Flory Tsai / agilent 2 R8 x) t {; w
11:20-12:00* z3 X6 i, ~, G" s5 P; e	Recent Development Work and Trend for Semiconductor Device Characterization ' ~$ \, \|2 [+ z/ @: P4 x, d5 m: W	AL Feng / 專案經理 / Keithley Taiwan ' O' B. \|. T9 `! ?% o4 K

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chip123 · 發表於 2009-10-21 18:01:32

Session 4: Diffusion

* c; r, E) j9 H: }8 B% O4 Z5 A l! u	Topic * r. R/ C! O7 k* F# w	Speaker- j& W/ y% l/ A4 \|+ P
9:00-9:40 2 E2 @' A9 t. U! }	Surface Preparation process control requirement to support CMOS scaling into 22nm $ e, J$ c7 u# }% Y$ E8 B- G	Dr. Scott Becker/ Vice President, FSI % S6 X% W% \|! ?: B
9:40-10:20. c( `: A. U9 r h% L6 c9 g4 ^) w) B9 P3 Y	Wafer techincal roadmap and application for advanced or special proces. @. n0 n# M: C" ^/ H	MEMC % o4 C1 t9 D/ F, q5 @
10:20-10:40 + \/ ~" K* ?- f6 c/ r# U	Break: B( }$ k; v+ v/ s	% y% `. A. ~7 E* r2 e- C! f
10:40-11:20 5 n& L7 d& c) c7 R; C0 t	3 O c4 C/ e( [9 V	' K0 U ~' F& @2 R5 a. j- D

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chip123 · 發表於 2009-10-21 18:02:03

Session 5: Litho

$ O( ?5 t7 S, r! X6 j	Topic 5 V* s! O' y" \8 E	Speaker) `! Q" e# ]) m" }1 a6 O6 d
13:20-14:005 C2 N! I& H# a/ q8 U# y& r& p7 K! A	Photomask technology for 32/22nm and beyond * a5 `% P/ Q0 T0 V	Dr. Hiroaki Morimoto/Senior General Manager,6 l! w& x+ R6 N* Q, p Toppan Printing- c5 V+ z) G, P" y! \|
14:00-14:40 ' R* E/ ?9 t0 G+ e* N- n" v0 L	0 Z! ~3 Z) o: m: f# E/ v9 N0 M5 f8 D Implant Resists for Advanced Node Applications7 m* n7 _. d; S	Mr. Yoshiro Yamamoto/ 1 r, ]1 \1 H) a; E2 I* B. N/ g/ s) WDUV RD mamager, DOW d, U& \, {) z2 u d! X2 Q/ Y" Y " U' J, Z" y* I- B I/ O2 Q; sSemiconductor Technology . B& T! T+ N% r2 B6 N8 w
14:40-15:00 % }% H% o$ a' ]9 Q	Break$ J7 \|" h+ j `) z" C. r/ e	# Q* a2 \|8 y1 J& d6 k! f( e- @
15:00-15:40 ; r* z# a+ A% \' {4 i& X' Y6 c2 [3 P	State-Of-The-Art Development of BARC Material 2 _; N, l* T7 q# @: E	Brewer Science - I3 u. H& \|7 q- b. V& y2 \' R
15:40-16:20 ( N( C, \|* z! u' A0 v+ \|3 j* n+ _9 L	The Future Trend for Next Generation Lithography 2 g: F' X. w* V) u( Y	ASML 6 [4 u' R' x3 E$ ?
16:20-17:00 . k0 d, X F5 ^& N	Future Trend of Track Technology * ~6 Y6 n1 L0 L p	TEL ( q* R' U; e! @9 p, `

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chip123 · 發表於 2009-10-21 18:02:34

Session 6: Etching

/ `. \|( k2 c. z3 A, ]) I, m' G& B	Topic! m( t2 Z- Q3 H' v; t; E# C	Speaker 0 `( @" k! h( A2 Z# @/ d
13:20-14:00 7 S4 b* y u# L' v& X	The Advantages of real-time wet process monitoring by multi-channel, in-line NIR analyzer , h/ {* H; n! j# h; S/ p	Mr. Shay Tina / CI Semi , Director of Sales . O6 d- K$ i! P( P
14:00-14:40( i5 l6 `9 [% r! Q	Green Chemistry for current technology and beyond) V" J! D! X \) `$ d/ \|7 \4 p# d	Mr. Elvis Sheen / Mallinckrodt Baker, Senior Manager s# \|, {1 g# ]4 `
14:40-15:00 $ o) j' [( V3 @	Break " {8 _( T \" @3 {! z; Z7 ?5 }8 s	" Z$ k/ g3 [: j" \|- {8 M% i
15:00-15:40 + F- x- o& t+ Z3 \$ P1 N4 L	Post-etch residue removal for advanced copper low-k device 9 p# A- [' b* U. Z/ R	Dr. Hisashi Takeda / EKC Technology, DuPont ; Y; j/ v# R/ B' ^
15:40-16:20 3 J1 w" e5 M, G; G7 Y3 P( q	Edge Die Yield Improvement with Immersion Lithography Defectivity Control by Bevel Etch Clean K! U4 ?4 T6 J	Lam Research) }1 H+ G) b# m+ t5 ^
16:20-17:00 8 c% f' n: g7 S* d: ~' Z	Improved Control of Through-Silicon Via Profiles for Advanced Packaging Applications( o; g. t# S# I) c	Surface Technology Systems ], e2 n: Q# n S! F& b5 s' _! T

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