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標題: First Fully CMOS-Integrated 3D Hall Probe[EPFL/2005] [打印本頁]

作者: mt7344    時間: 2007-6-11 10:34 PM
標題: First Fully CMOS-Integrated 3D Hall Probe[EPFL/2005]
網路上抓的 paper, 希望對大家有幫助!!8 _0 Y6 ^  X+ T4 _# @, `. z! L
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/ ?( Z4 x6 @" p, ~- J- J) S: xABSTRACT5 ^7 D  h. B/ a" O8 u
In this paper, we present a new planar fluxgate
" y' L9 _# {' [2 F' U( y* Nmagnetometer structure. The sensor has the% H/ X: W' s7 t! C( q7 G
orthogonal fluxgate configuration which makes the
$ w7 d0 |$ F) g( K/ A' Kdetection part independent of the excitation
! h6 Y' f  ^3 Z6 Q6 E" X  Rmechanism. The sensor consists of a ferromagnetic
. @) K" o2 c/ U! Kcylindrical core covering an excitation rod, and
; D' O, Z6 f: {( w; wplanar coils for signal detection. The fabricated
+ S. }0 V% d5 g  t8 Gsensor has a linear range of ±250 μT, a sensitivity$ i$ O  m8 ^3 r/ `, U8 o2 `8 @
of 4.3 mV/mT, and a perming below 400 nT for
9 z( l9 s$ f( a5 X' g2 [! S200 mA peak sinusoidal excitation current at/ x: h- X7 B; R6 w& S. @
100 kHz. The effect of demagnetization on the
9 g: n" E  R. hsensitivity, linear range, and perming for this
6 S2 i5 e1 D! P3 astructure is demonstrated by varying the length of
1 O9 g! P8 \+ n7 q" j8 Cthe ferromagnetic core.( ~" q- E4 l9 a; F( ^/ Q

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. q+ k$ R, Z- PABSTRACT7 a) H" H8 y- U1 r* n
In this paper we report on a 32x32 optical imager
5 Z% W$ p. Q8 }) r. A5 R9 j! Q; e( M, G( dbased on single photon avalanche diodes integrated in, x6 k. A5 a" [1 e! y- C8 g
CMOS technology. The maximum measured dynamic6 U5 l2 ^  g" ?1 d( s
range is 120dB and the minimum noise equivalent; a# E, B0 r  r: G* i0 Z
intensity is 1.3x10-3lx. The minimum integration time8 a# K) r4 M# e! C* M- B
per pixel is 4􀁐s. The output of each pixel is digital,# U% e+ ^& e3 C0 o: J
thereby requiring no complex read-out circuitry, no% |' _' |0 |" K$ Z( T7 e2 z
amplification, no sample & hold, and no ADC.! `- w2 o9 H) _# G% o2 E! R
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ABSTRACT+ @; Z2 Z1 L- n7 R- k9 a, G
We present the first fully CMOS-integrated 3D
5 r' `- I* k+ v5 Q2 OHall probe. The microsystem is developed for precise" M- D2 R  x9 M* \2 }; k0 v
magnetic field measurements in the range from9 H0 n6 V# [5 _6 T% ?! a) }
militeslas up to tens of tesla in the frequency range% K9 _% b/ k& z
from DC to 30 kHz and a spatial resolution of about* ^: c$ Q+ r& M5 ~" {2 a
150 μm. Microsystem is realized in a conventional
$ @9 a6 f; B" i; CCMOS process without any additional processing step
, R% R2 R. D7 J5 d6 _, |/ p' ~and can be manufactured at very low cost. With the
% a) V; P4 [7 W' q- qelectronics circuit applying the so-called spinningcurrent
& n) B4 ]1 F( Qtechnique to the Hall sensor block, we obtain
8 e) `/ }  ~- [7 f8 e6 blow noise (a resolution better than 100 μT) and low* ~# x3 L. }+ }% }- ~
cross talk between the channels (less than 0.2%
9 F7 G; X+ h/ S, J! ~9 Bbetween the channels up to 2 T). The single chip
' {  Y1 e* {$ g# kconfiguration insures a precision of the orthogonality, W' ]" E, _1 ~" Q% {. L2 M; p
between the measurement axes better than 0.5°. A
$ L* o- w) A: C; R8 [7 W/ [temperature sensor based on band-gap cell is integrated
8 U9 V0 u* W* I$ q$ gdirectly on the chip, which allows a good temperature0 Z% H' v7 R4 h: k. z
drift compensation of the system.3 Q. r, N: @0 y+ w/ s5 L
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" j7 l# `. C/ {9 U1 `, a) [4 K+ b6 E1 ?
Magnetic sensors having submicrometer spatial resolution
5 D1 C8 {( T& j9 Z# D  V3 qare key elements in several fundamental studies as well9 U. H7 ?! n3 e0 l+ z2 [5 |
as industrial applications.1–4 Hall effect devices are emerging5 ?7 v+ j( @5 x5 C5 k$ d
as one of the most suitable solutions.4–9 The ordinary Hall, y0 i) {2 B* B7 h" Q  {, }
effect is due to the Lorentz force acting on charge carriers in* m! l6 s+ v' D; Z# I1 ]
metals, semi-metals, and semiconductors.5 Magnetic materials- H+ `& m& t# a4 v
show additional “Hall phenomena” which are, generally# N0 t# n/ W1 ^  o
speaking, generated by spin–orbit interactions: the so-called
# h* l# V( L/ e; h* K# cextraordinary10–16 and planar Hall effects.17–
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2 O' R" R& O0 J) P, P. U, p2 U; f& x8 b3 d9 b6 T
We developed a LODESR spectrometer based on a miniaturized Hall sensor and a
. U$ n4 d- s' Qresonant cavity tuned at 14 GHz. We used InSb cross-shaped Hall devices (designed and
3 |9 I& x4 ~6 E" z& Sfabricated in collaboration with Asahi Corporation) with active areas down to (7 μm)2. The/ n7 r2 Z6 i) n) I$ ^2 F& Z0 t
Hall sensor is inserted in the cavity within a hole.
8 k& u# ]4 ~7 Q3 f1 s" vCoupling between the microwave power (guided wave) and the cavity is achieved by using% A# ?& A  a5 J4 O9 n3 D" r% @
an iris.We adjusted the iris diameter and the cavity dimension such that the resonant9 f' t% ]6 x2 C3 U" b# D: A( U: e
frequency is about 14 GHz. Our final design has a 4.36 mm diameter aperture. The Hall
3 }+ S. f8 y# L" J5 v, X0 F& f& ~device does not significantly change the Q-factor and the resonance frequency of the cavity.
+ C) l9 p2 `) U: x; W' n# o' EThe quality factor Q of the cavity is about 104.
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' l1 u" a. J0 Q; Y! E2 k: \
Abstract—In this paper, we present a low-power, two-axis fluxgate
* |% J, Y: D4 G8 M! Dmagnetometer. The planar sensor is integrated in a standard! |/ B0 |3 L0 C: ]; ^
CMOS process, which provides metal layers for the coils and5 M  m( A  ?: V4 m& o& S% `5 j2 h
electronics for the signal extraction and processing. The ferromagnetic
7 g4 j# l( X, I, F( ]- D, Hcore is placed diagonally above the four excitation coils
' r1 i5 `# k) C  f2 mby a compatible photolithographic post process, performed on
# B2 [' Y) @! Y& b/ F4 ?, ga whole wafer. The sensor works using the single-core principle,
+ o8 F+ L( g; ~- D$ ^/ Q6 Twith a modulation technique to lower the noise and the offset$ ^( A9 W- l+ G- u
at the output. In contrast to traditional fluxgate approaches, the
4 @6 P5 b( O" }8 c& M9 W7 d: Asensor features a high degree of integration and minimal power# Z' T7 ^7 [! I8 Q, W
consumption at 2.5 V of supply voltage that makes it suitable6 t  }) O& [+ N7 J9 I' x5 ~, ^2 k0 B7 F
for portable applications. A novel digital feedback principle is
" R/ U. g5 d4 m# K- u8 |integrated to linearize the sensor characteristics and to extend the8 o( W9 v5 v6 V6 b  C
linear working range.
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A microscopic four-point probe 4PP for resistivity measurements on thin films was designed and
, Y8 z/ M* |1 Q6 G5 H, Kfabricated using the negative photoresist SU-8 as base material. The device consists of four
. G; X  Y7 h$ m* z& F2 v7 S( Umicroscopic cantilevers, each of them supporting a probe tip at the extremity. The high flexibility of
9 g7 N0 |4 k7 ]: ], W5 R+ BSU-8 ensures a stable electrical point contact between samples and probe tip with all four electrodes6 R  C3 u! m% S- v" g" P
even on rough surfaces. With the presented surface micromachining process, 4PPs with a( c5 h% Q: Q6 x8 d' L# }
probe-to-probe spacing of 10–20 m were fabricated. Resistivity measurements on thin Au, Al, and/ y) ^  M* ]0 v
Pt films were performed successfully. The measured sheet resistances differ by less than 5% from% d" U( f9 a; N% l
those obtained by a commercial macroscopic resistivity meter. Due to the low contact forces
: q- b( h& \9 dFcont10−4 N, the 4PP is suitable to be applied also to fragile materials such as conducting
' q: A- X/ G" zpolymers. Here the authors demonstrate the possibility of performing resistivity measurements on
$ t5 `* e6 F: A$ {  b) b9 C& P100-nm-thick pentacene C22H14 films with a sheet resistance Rs106 /. © 2005 American; K2 {& v3 Z( h) m
Institute of Physics.
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We present here a novel concept to perform NMR spectroscopy: Confining the sample within
8 Y$ B" |1 G* aartificial vesicles, which are structured on the surface of a microfabricated planar detection
& v8 j3 W+ r1 ^4 Mcoil. Different vesicle patterns show the improvement of the NMR performance, when
7 Z6 }+ `  G1 Cstructuring the sample in areas of homogenous RF field.7 r/ r; [  ?( Q: U/ v  `- E
2 ^7 W- o& Y1 ~8 k' p2 d' Y" N

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We developed an inductive system to measure the surface concentration of superparamagnetic/ I; [1 R- s" f/ d& }- N* A- h! U8 _
microbeads resulting from a bioassay. Our tabletop apparatus, tested with Dynal MyOne™
  E5 W) e* o) ?' Omicrobeads, has a detection limit of about 1000 beads/Hz1/2 i.e., about 21010 Bohr magnetons.
3 _( X3 v. f) o: qThe system can measure surface concentrations from 0.01% to 100% over the 6 mm2 sensitive area
. C; ^  E/ k; ~with an integration time of 1 s. © 2005 American Institute of Physics.
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[ 本帖最後由 mt7344 於 2007-6-11 10:47 PM 編輯 ]
作者: angala    時間: 2008-4-5 10:07 PM
推推,我想看paper^^感謝大大唷~~
作者: engineer    時間: 2015-6-6 07:32 AM
探討『磁力』相關的論文嗎?值得一看,甘溫啦。




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