標題: First Fully CMOS-Integrated 3D Hall Probe[EPFL/2005] [打印本頁] 作者: mt7344 時間: 2007-6-11 10:34 PM 標題: First Fully CMOS-Integrated 3D Hall Probe[EPFL/2005] 網路上抓的 paper, 希望對大家有幫助!!8 _0 Y6 ^ X+ T4 _# @, `. z! L
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In this paper, we present a new planar fluxgate " y' L9 _# {' [2 F' U( y* Nmagnetometer structure. The sensor has the% H/ X: W' s7 t! C( q7 G
orthogonal fluxgate configuration which makes the $ w7 d0 |$ F) g( K/ A' Kdetection part independent of the excitation ! h6 Y' f ^3 Z6 Q6 E" X Rmechanism. The sensor consists of a ferromagnetic . @) K" o2 c/ U! Kcylindrical core covering an excitation rod, and ; D' O, Z6 f: {( w; wplanar coils for signal detection. The fabricated + S. }0 V% d5 g t8 Gsensor has a linear range of ±250 μT, a sensitivity$ i$ O m8 ^3 r/ `, U8 o2 `8 @
of 4.3 mV/mT, and a perming below 400 nT for 9 z( l9 s$ f( a5 X' g2 [! S200 mA peak sinusoidal excitation current at/ x: h- X7 B; R6 w& S. @
100 kHz. The effect of demagnetization on the 9 g: n" E R. hsensitivity, linear range, and perming for this 6 S2 i5 e1 D! P3 astructure is demonstrated by varying the length of 1 O9 g! P8 \+ n7 q" j8 Cthe ferromagnetic core.( ~" q- E4 l9 a; F( ^/ Q
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In this paper we report on a 32x32 optical imager 5 Z% W$ p. Q8 }) r. A5 R9 j! Q; e( M, G( dbased on single photon avalanche diodes integrated in, x6 k. A5 a" [1 e! y- C8 g
CMOS technology. The maximum measured dynamic6 U5 l2 ^ g" ?1 d( s
range is 120dB and the minimum noise equivalent; a# E, B0 r r: G* i0 Z
intensity is 1.3x10-3lx. The minimum integration time8 a# K) r4 M# e! C* M- B
per pixel is 4􀁐s. The output of each pixel is digital,# U% e+ ^& e3 C0 o: J
thereby requiring no complex read-out circuitry, no% |' _' |0 |" K$ Z( T7 e2 z
amplification, no sample & hold, and no ADC.! `- w2 o9 H) _# G% o2 E! R
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ABSTRACT+ @; Z2 Z1 L- n7 R- k9 a, G
We present the first fully CMOS-integrated 3D 5 r' `- I* k+ v5 Q2 OHall probe. The microsystem is developed for precise" M- D2 R x9 M* \2 }; k0 v
magnetic field measurements in the range from9 H0 n6 V# [5 _6 T% ?! a) }
militeslas up to tens of tesla in the frequency range% K9 _% b/ k& z
from DC to 30 kHz and a spatial resolution of about* ^: c$ Q+ r& M5 ~" {2 a
150 μm. Microsystem is realized in a conventional $ @9 a6 f; B" i; CCMOS process without any additional processing step , R% R2 R. D7 J5 d6 _, |/ p' ~and can be manufactured at very low cost. With the % a) V; P4 [7 W' q- qelectronics circuit applying the so-called spinningcurrent & n) B4 ]1 F( Qtechnique to the Hall sensor block, we obtain 8 e) `/ } ~- [7 f8 e6 blow noise (a resolution better than 100 μT) and low* ~# x3 L. }+ }% }- ~
cross talk between the channels (less than 0.2% 9 F7 G; X+ h/ S, J! ~9 Bbetween the channels up to 2 T). The single chip ' { Y1 e* {$ g# kconfiguration insures a precision of the orthogonality, W' ]" E, _1 ~" Q% {. L2 M; p
between the measurement axes better than 0.5°. A $ L* o- w) A: C; R8 [7 W/ [temperature sensor based on band-gap cell is integrated 8 U9 V0 u* W* I$ q$ gdirectly on the chip, which allows a good temperature0 Z% H' v7 R4 h: k. z
drift compensation of the system.3 Q. r, N: @0 y+ w/ s5 L
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