, \; o8 H8 R0 B8 d* `* {% VInvestigation on Robustness of CMOS Devices Against Cable Discharge Event (CDE) Under Different Layout Parameters in a Deep-Submicrometer CMOS Technology / @' G5 \# p% Q2 ?; m; c) u 4 c/ g+ W1 c2 T* K$ ?4 n" ?& g; s作者: semico_ljj 時間: 2008-11-6 08:40 PM
Abstract—Cable discharge events (CDEs) have been found* h k$ R. [0 a& N, g- J8 M
to be the major root cause of inducing hardware damage on # P5 F. Z+ x7 y* K" Y/ G Ethernet ICs of communication interfaces in real applications. Still,* Z/ `" U- H) t' k0 g# z- K- J R- \
there is no device-level evaluation method to investigate the ro: F' Y3 U3 n& M. l' r* z/ A8 l1 m/ w
bustness of complementary metal–oxide–semiconductor (CMOS) {" ^5 e5 _6 a# L8 H- _ z; I3 y5 F4 k devices against a CDE for a layout optimization in silicon chips.作者: semico_ljj 時間: 2008-11-6 08:41 PM
谢谢支持！作者: hansonzhao 時間: 2008-12-3 04:49 PM
好冬冬，楼主辛苦了+ D) F3 ^% n( b, n0 x3 \
希望楼主多多提供
