標題: 借鉴一下RF ESD Design in 130nm CMOS [打印本頁] 作者: semico_ljj 時間: 2008-11-1 11:05 PM 標題: 借鉴一下RF ESD Design in 130nm CMOS An ESD-Protected 5-GHz Differential Low-Noise Amplifier in a 130-nm CMOS Process ( F+ O- V. D5 [3 V- u5 M0 A * \" B4 m0 t% s$ d- nAbstract- A novel ESD protection design for radio-frequency (RF) differential input/output (I/O) pads is proposed and successfully - q# Y8 m/ }) D2 Xapplied to a 5-GHz differential low-noise amplifier (LNA) in a 130-nm CMOS process. In the proposed ESD protection design, 7 Q; o }5 R: T3 G2 Yan ESD bus and a local ESD clamp device are added between the differential input pads to quickly bypass ESD current, especially1 P: `0 K# @ @
under the pin-to-pin ESD-stress condition. With 10.3-mW power consumption under 1.2-V power supply, the differential LNA$ }* P' C. `* p' u/ C" ~6 o! I
with the proposed ESD protection design has the human-bodymodel (HBM) ESD robustness of 3 kV, and exhibits 18-dB power gain and 2.62-dB noise figure at 5 GHz. Experimental results have demonstrated that the proposed ESD protection circuit can be co-designed with the input matching network of LNA to simultaneously achieve excellent RF performance and high ESD robustness.# u1 _7 O3 U: o9 K
( k6 s4 T& j$ g" c+ @, h3 e- j# V作者: Chandler_Tseng 時間: 2009-10-16 10:18 AM
This is what I need document....7 A4 j2 t" |- ^3 Q
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: a6 t/ q j0 }, f) k% dThanks.作者: ksj116 時間: 2010-2-5 02:10 PM
i hope u can bring me some admirations.