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標題: Low-Power Low-Voltage Sigma-Delta Modulators in Nanometer CMOS [打印本頁]

作者: cnasic    時間: 2008-3-11 11:52 AM
標題: Low-Power Low-Voltage Sigma-Delta Modulators in Nanometer CMOS
Contents6 o3 V3 O, E3 w$ Q! a; S
List of Tables& s1 a% Q. F" }8 L! O- A
List of Figures' E7 A5 k1 J: G: \" ?4 Y2 R
Symbols and Abbreviations
! v0 I1 N- g2 C5 ]+ k: EPhysical
, G; Z& n! A# H9 e. Y5 ~1 Introduction 1
, D4 x- S, L7 Q8 a1.1 Motivation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
/ K. L3 z$ I8 i% S% m1.2 Outline of the Work . . . . . . . . . . . . . . . . . . . . . . . . . . . 2; M+ s( e& Q, K( Q
2 ADCs in Nanometer CMOS Technologies 3
" w+ p$ V% J6 k7 T, N( I2.1 Introduction . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3& p) U. w1 B! R! S6 ~; K
2.2 Scaling-Down of CMOS Technologies . . . . . . . . . . . . . . . . . 3
; n) [7 ]. w. L$ I5 ~# E' X2 w2.2.1 Driving Force of the CMOS Scaling-Down . . . . . . . . . . 4  w* }$ A3 n9 ?( A- y+ R
2.2.2 Moving into Nanometer CMOS Technologies . . . . . . . . . 52 o; T5 B7 Q8 s9 s& M( _! ?
2.3 Impact of Moving into Nanometer CMOS to Analog Circuits . . . . . 6
2 `- Y2 s2 R1 `1 a/ s2.3.1 Decreased Supply Voltage . . . . . . . . . . . . . . . . . . . 6" ^: H  c' j, I2 ?8 G' K
2.3.2 Impact on Transistor Intrinsic Gain . . . . . . . . . . . . . . 7% \( d5 f+ a: x
2.3.3 Impact on Device Matching . . . . . . . . . . . . . . . . . . 93 ]9 l$ I$ _# j5 S1 I! t3 S
2.3.4 Impact on Device Noise . . . . . . . . . . . . . . . . . . . . 105 t) ]) B$ U6 S% s% l
2.4 ADCs in Nanometer CMOS . . . . . . . . . . . . . . . . . . . . . . 11
/ k* c, ^0 P' u3 @2.4.1 Decreased Signal Swing . . . . . . . . . . . . . . . . . . . . 130 v# I0 n3 N4 M$ ]
2.4.2 Degraded Transistor Characteristics . . . . . . . . . . . . . . 13- N2 c; f8 t# d" c) |/ p' c
2.4.3 Distortion . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
% V; P  f# t2 n$ ]% ~1 V" Mvii
5 @$ d- p; r. b& y" V$ q) L3 f9 r2.4.4 Switch Driving . . . . . . . . . . . . . . . . . . . . . . . . . 14, T7 j: }/ j) H6 y
2.4.5 Improved Device Matching . . . . . . . . . . . . . . . . . . . 17$ Q& }1 b$ [) W, H& u- _3 X- K
xi) S4 c0 r& c7 x% Y$ F
xiii# Q# P! \' {- S
xxi* |  _/ c+ [# [
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . xxi. G" A6 s0 U" l8 Y: f! ], U
Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . xxi
9 ?5 Y" P4 V% D+ ]; `% dCONTENTS
* Z. x0 O: A. V$ |9 }: `* Z2.4.6 Digital Circuits Advantages . . . . . . . . . . . . . . . . . . 171 N4 a& h: o* v0 {$ M7 L1 k. _
2.5 Conclusion . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17" i# t; }7 }5 Q# ~- A
3 Principle of - ADC 19$ @& \6 p" I5 |9 Q; }  R- }4 L
3.1 Introduction . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 194 s9 E% r5 K# p; A( U9 H
3.2 Basic Analog to Digital Conversion . . . . . . . . . . . . . . . . . . 19
2 C& L# ], v( n* p8 i$ T; F3.3 Oversampling and Noise Shaping . . . . . . . . . . . . . . . . . . . 24
" v6 \0 W9 ?7 l- W3.3.1 Oversampling . . . . . . . . . . . . . . . . . . . . . . . . . . 25
! v  i8 V: b( g* N1 J8 o' Q5 b. X3.3.2 Noise Shaping . . . . . . . . . . . . . . . . . . . . . . . . . 26
" v% {! a( T: k! F& R5 r( ]" ]3.3.3 - Modulator . . . . . . . . . . . . . . . . . . . . . . . . 29& C* U- t9 S% Y( V
3.3.4 Performance Metrics for the - ADC . . . . . . . . . . . . 31
& a1 B! a1 {! P/ Y3.4 Traditional - ADC Topology . . . . . . . . . . . . . . . . . . . . 33: h, `4 y7 u# k  v3 ]
3.4.1 Single-Loop Single-Bit - Modulators . . . . . . . . . . . 33* a/ M" n  \2 D8 R$ k7 c) o+ L
3.4.2 Single-Loop Multibit - Modulators . . . . . . . . . . . . 376 s5 |6 n8 G$ M! \- z: _
3.4.3 Cascaded - Modulators . . . . . . . . . . . . . . . . . . 39
2 ~: f, P) t5 n* m) |7 g5 ?3.4.4 Performance Comparison of Traditional - Topologies . . 46
6 Q/ I* }7 q; E- V* f# X- }3.5 Conclusion . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 46
0 o. D  s/ q7 w* a6 m* D. f4 Low-Power Low-Voltage - ADC Design in Nanometer CMOS: Circuit6 v1 J6 e9 E9 K( R4 ^
Level Approach 47
' m9 f' ~# u  R( i4.1 Introduction . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 47
% d% }; A: A! V$ F: G$ h1 R) @3 h4.2 Low-Voltage Low-Power OTA Design . . . . . . . . . . . . . . . . . 480 G8 `3 p0 a  d+ ]- [2 A6 ~
4.2.1 Gain Enhanced Current Mirror OTA Design . . . . . . . . . . 49$ Z: o! C3 e( H( |7 j( S
4.2.2 A Test Gain-Enhanced Current Mirror OTA . . . . . . . . . . 53
, ]& Y% {2 X7 I6 ?. [) l4 B- e% [% w: O4.2.3 Implementation and Measurement Results . . . . . . . . . . . 54
% X" @! B$ z5 P9 Y. `4.2.4 Two-Stage OTA Design . . . . . . . . . . . . . . . . . . . . 55' {9 c$ f6 ?" p4 l4 W2 o' ?3 A
4.3 Low-Voltage Low-Power - ADC Design . . . . . . . . . . . . . . 66) M7 _7 L, p7 L4 R/ _8 Q7 T& _2 B% h
4.3.1 Impact of Circuit Nonidealities to - ADC Performance . . 66
! T  j- B' y( ]* {% n8 V4.3.2 Modulator Topology Selection . . . . . . . . . . . . . . . . . 67( J) s9 K3 r) _; a
4.3.3 OTA Topology Selection . . . . . . . . . . . . . . . . . . . . 698 ?: ~# h: z9 u! ~/ ~/ x
4.3.4 Transistor Biasing . . . . . . . . . . . . . . . . . . . . . . . 75
5 w& R8 @8 f3 h' W4.3.5 Scaling of Integrators . . . . . . . . . . . . . . . . . . . . . . 75
  r+ V  o$ {) n% _5 k, k& \4.4 A 1-V 140-μW- Modulator in 90-nm CMOS . . . . . . . . . . . 76& s! _& b; m$ V$ A5 a0 k
4.4.1 Building Block Circuits Design . . . . . . . . . . . . . . . . 76
6 f" H" `# F! B+ `/ W. Wviii8 J; H" Y  E8 n) G/ ]; k
4.4.2 Implementation . . . . . . . . . . . . . . . . . . . . . . . . . 80. y# [- l6 p; b, c- N% y" ?
4.4.3 Measurement Results . . . . . . . . . . . . . . . . . . . . . . 828 X( B3 e5 b: C" F# z0 e
4.5 Measurements on PSRR and Low-Frequency Noise Floor . . . . . . . 87
4 _% P9 s& M7 a3 J7 U1 ~% o+ T4.5.1 Introduction of PSRR . . . . . . . . . . . . . . . . . . . . . . 87
, f/ ^. x& v. c" @4.5.2 PSRR Measurement Setup . . . . . . . . . . . . . . . . . . . 88
* G! M3 c6 g7 J0 Y( V1 |1 K4.5.3 PSRR Measurement Results . . . . . . . . . . . . . . . . . . 88
8 \6 l" I  N$ o" Y' M+ A* W% m# x4.5.4 Measurement on Low-Frequency Noise Floor . . . . . . . . . 95
. w! m* O" H3 I! f7 c% d4.6 Conclusion . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 96
& X# A3 _+ ^2 \, O; y5 Low-Power Low-Voltage - ADC Design in Nanometer CMOS: System
1 T/ G; o* x# a# M$ n) M0 u( {CONTENTS ix
3 b7 d' M  x1 W6 ?# tCONTENTS
, M$ K$ t" h8 p$ d6 Conclusions 149
" u1 q# |5 Z6 l8 y  `' i; e& y8 XBibliography 151
. z3 F' Y1 h! N( L- sIndex 157
作者: scan7510    時間: 2009-7-27 12:59 AM
看不太懂2 b! T% x* W3 W7 y, [& }
可能還沒學過吧
# i9 P# P6 t1 H& @9 t現在只能單純推一下
* e8 s8 R2 @, a: }( O+ p謝大大分享
作者: deltachen    時間: 2009-11-25 11:44 AM
謝謝大大的分享~知識因分享而壯大!
作者: jjam    時間: 2009-11-25 11:28 PM
感覺是非常實用的內容0 w1 i" ^5 z& p4 M. t5 T; I
感謝大大的分享~~
& T( g0 {) [5 b# U" V希望能對SDM有所認識與了解




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