1 | 隨著節能議題在全世界持續延燒,功率電子技術逐漸在半導體領域中嶄露頭角,不論是傳統的晶圓代工(八吋及以下),或是DRAM轉型,都將功率電子列入技術藍圖之中,例如德國Infineon已使用八吋設備製造CoolMOS (一種 Super-junction MOSFET),許多早期的六吋廠也加入Power ICs, MOSFET與Bipolar Devices的製造。此外國內蓬勃的類比IC設計與製造商也廣義地屬於功率半導體領域,都是本研討會預期可使其獲益的產業項目。 |
2 | 本研討會首次加入應用數值模擬技術於功率半導體設計之介紹,並講解與示範元件設計、製程設計與電路設計等重點單元。 |
PhD degree – King's College, University of Cambridge, United Kingdom (Oct. 1995)
Day 1 | 議題 |
08:00 ~ 08:30 | Registration |
08:30 ~ 10:20 | Introduction to Power Semiconductor Devices - Wesley Hsu (Classification of Power IC Devices and Devices Physics) |
10:20 ~ 10:40 | Coffee Break |
10:40 ~ 12:00 | Power MOSFETs - Florin Udrea |
12:00 ~ 13:00 | Luncheon |
13:00 ~ 14:20 | High voltage Diodes - Wesley Hsu |
14:20 ~ 14:40 | Break |
14:40 ~ 16:00 | IGBTs - Part1 - Florin Udrea |
16:00 ~ 16:20 | Coffee Break |
16:20 ~ 17:30 | IGBTs - Part 2 - Florin Udrea |
Day 2 | 議題 |
08:00 ~ 08:30 | Registration |
08:30 ~ 10:20 | Advance Devices/Technologies for HV Power ICs - Florin Udrea |
10:20 ~ 10:40 | Coffee Break |
10:40 ~ 12:00 | Superjunctions - Florin Udrea |
12:00 ~ 13:00 | Luncheon |
13:00 ~ 14:20 | Introduction to Power Device and Process TCAD Simulation- Florin Udrea and Alice Hsieh |
14:20 ~ 14:40 | Break |
14:40 ~ 16:00 | Example of IGBT and Superjunction TCAD Simulation - Alice Hsieh |
16:00 ~ 16:20 | Coffee Break |
16:20 ~ 17:00 | Mix-mode (TCAD-Spice) Power Device Simulation - Alice Hsieh |
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