% Z1 K7 `, F# e3 @9 f' Q- X | Topic | Speaker |
13:20-14:00) u, j Q% I. a | Engineering Slurry for Copper Chemical Mechanical Polishing 6 d2 e0 j7 L# g. a/ h: _* n | Dr. Song-Yuan Chang / CTO& senior VP, UWiZ2 [) S" S9 p; |; a3 u- ~6 ~( @ Technology |
14:00-14:40 | Tailoring CMP Consumable Sets To Meet the Increasing Demands Of IC Device Manufacturing For Advanced Nodes | Dr. Fred Sun / Cabot' d+ b" i; s+ _( \ |
14:40-15:00' n+ K% v) k% ]) W( J2 E$ r* I* N% g | Break | |
15:00-15:40 | ?8 p, |5 C* l8 O) Q; Y+ B0 z( x. v* q | Apllied Materials% j1 c6 i' H& D" f |
15:40-16:20; j8 W k. K, t6 r: `1 X | CMP Fundamentals and Implications for Consumables Design | Ms. Kate Kao/ Marketing Manager Dow chemical |
Topic | Speaker | |
13:20-14:00 | Sip Assembly technology?0 s7 e; J; k) |4 ]8 l: W6 g | Dr. KC Yee/ VP, ASE |
14:00-14:40; N( i( b/ \9 m3 X) M" ?+ P | Assembly trend from perspective7 p& b9 i* _* `$ M3 \. I0 H | 邱世冠 資深經理/矽品 前瞻科技中心, d& G+ p* G5 l* z0 s. u |
14:40-15:00 | Break | ( z) |3 q+ K, H3 e) u! | |
15:00-15:40: O% |# b0 a/ a0 d; a! R( S; c | The Paradise of Cost-Effective Wafer Probing Technology6 y2 z) V6 ^* I, i | Dr. CCNi / Associate Director , KYEC9 u! e1 J( |4 S5 z$ S" v- {3 `: I |
15:40-16:20 | RF SOC /Sip?. ]8 \: m: W! p$ f | Verigy# g2 E: W3 w4 @- { p. d' H |
Topic7 u, r3 p% `3 \# I& U( y' z' w" g | Speaker | |
9:00-9:40 | Design Trend?5 M1 M8 L& g- J | Marketing VP, Dr. Chiang Alchip |
9:40-10:20$ \7 k' x' \. n8 O | Charged-Device-Model (CDM) ESD Protection in CMOS Integrated Circuits / ]3 t1 W8 A% ~ | Prof. Ming-Dou Ker / I-Shou Universit - S: p' K. F8 j, O" M9 {1 B. V |
10:20-10:40 | Break$ O9 P, z2 O: b8 ^ t | |
10:40-11:20# o! } X# |! I& e9 W; C: j) T% o | Parametric Test Challenges of the Next Process Frontier | Ms. Flory Tsai / agilent |
11:20-12:00 | Recent Development Work and Trend for Semiconductor Device Characterization | AL Feng / 專案經理 / Keithley Taiwan |
Topic: l0 r5 q6 p9 G) b, z& Y0 ?( s' R | Speaker, P7 _3 F% p& _1 g/ S. } | |
9:00-9:40 | Surface Preparation process control requirement to support CMOS scaling into 22nm | Dr. Scott Becker/ Vice President, FSI9 l/ ?3 {/ m V! v7 ], D |
9:40-10:20 | Wafer techincal roadmap and application for advanced or special proces | MEMC |
10:20-10:409 F( j. Y* P+ L s3 C$ a# O | Break4 H( M7 x7 @6 K# j5 n& N4 k* w | ' ^( `2 G5 q; B8 ~7 I |
10:40-11:20$ a1 Q) w" F5 F% _ |
_7 \0 g' M- t. e | Topic$ g1 K/ }# o% W2 Q1 ]+ o. c. |+ P | Speaker m4 S3 o* S5 i C, |2 b; { |
13:20-14:00 | Photomask technology for 32/22nm and beyond6 f7 r6 D; J; S$ A | Dr. Hiroaki Morimoto/Senior General Manager,6 q. C( H: }2 ]4 x: z8 ?: J Toppan Printing |
14:00-14:40 | Implant Resists for Advanced Node Applications+ B3 y+ q& C% K' h" w | Mr. Yoshiro Yamamoto/ 5 y5 l. w$ ]' Z) v( j0 D* c8 ]& ^ DUV RD mamager, DOW2 M- Y) ^) D# O * G, W% t+ X8 U+ u9 e" i Semiconductor Technology ) K" B, L. G: ?4 m& e |
14:40-15:00 | Break1 q9 ^# O6 X' L9 s | |
15:00-15:40 | State-Of-The-Art Development of BARC Material | Brewer Science |
15:40-16:20 | The Future Trend for Next Generation Lithography | ASML! J+ c3 k- ]/ d1 w5 u2 [: N2 ]* K |
16:20-17:002 B- v- ?+ W% J/ D) s5 j | Future Trend of Track Technology | TEL. T( N$ I/ Y" R/ _6 V: O |
$ ~; ^1 _& m2 B" E T6 N0 b | Topic | Speaker$ I) V( Y- n- x0 H' } |
13:20-14:00 | The Advantages of real-time wet process monitoring by multi-channel, in-line NIR analyzer 7 b* ^( b0 t3 `* k) z | Mr. Shay Tina / CI Semi , Director of Sales, V4 a6 Y; `- C: f% U# b |
14:00-14:40 | Green Chemistry for current technology and beyond# Y) t; q# Y/ w( _+ z( v+ J | Mr. Elvis Sheen / Mallinckrodt Baker, Senior Manager |
14:40-15:00* m1 Y' Y4 K @4 K% a- R3 W& } | Break | |
15:00-15:40 | Post-etch residue removal for advanced copper low-k device | Dr. Hisashi Takeda / EKC Technology, DuPont |
15:40-16:20" y z! \, Q8 M$ u0 i! d1 N: Z4 Q | Edge Die Yield Improvement with Immersion Lithography Defectivity Control by Bevel Etch Clean; L' R" t$ r L% V% u | Lam Research8 }4 T4 C" r- w( ?* p |
16:20-17:00 | Improved Control of Through-Silicon Via Profiles for Advanced Packaging Applications5 B; }3 Y; f2 j+ I' t# e | Surface Technology Systems |
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