標題: NLDD與NDD [打印本頁] 作者: hyseresis 時間: 2009-4-23 11:26 AM 標題: NLDD與NDD 想請問一下各位: {% l! [, f/ u% J, l) c
NLDD與NDD這兩層layer是做什摩用的?? + D- m; }2 P/ U4 q7 I' J在layout上要注意什麼? $ S9 W& [" p% g: X# F' U" b3 u/ d如能解答,必定感謝作者: tcsungeric 時間: 2009-4-25 10:20 AM
NLDD is a N-type lightly doped drain (implant layer) for E-field reduction @drain or source site especially for general submicro process. ; K, Q$ X$ i- ~, z& b' n0 x! p, MNDD is a N-type double diffusion drain (implant layer for current technology) for E-field reduction @drain or source site (depend on asymmetric or symmetric device structure) especially for high voltage process. No special layout concern, just follow DRM.